Semiconductor Power Devices: Physics, Characteristics, Reliability
| Author | : | |
| Rating | : | 4.47 (820 Votes) |
| Asin | : | 3642111246 |
| Format Type | : | paperback |
| Number of Pages | : | 536 Pages |
| Publish Date | : | 2014-05-13 |
| Language | : | German |
DESCRIPTION:
Heinrich Schlangenotto received the Ph.D. in electrical engineering at the University of Ilmenau, Germany. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. He is a member of the board of dir
"A look at a new text on power devices" according to Phil Hower. Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker, Springer-Verlag, Berlin Heidelberg, 2011.This is truly an excellent book. There is much here for those interested in power devices in general. Those with specific interests in power modules will find it even more rewarding. Written by four acknowledged experts, they have given us. "Review for the textbook by Josef Lutz et.al." according to Dieter Silber, Institute for Electrical drives, power Electronics and Devices, University of Bremen. This book has been written by highly recognized experts in device development, device theory, device integration methods, and application aspects for power electronics. It covers all important types of semiconductor power devices, and it treats important aspects of reliability, robustness and EMI problems. For device specialists, it presents a really useful theoretical base, and for power electronics specialists, it cont. Y. Sakiyama said Best textbook. I have been working in the high power semiconductor field for 15 years.Now I want to encourage young engineers study high power semiconductor engineering.This book covers all the topics from the traditional to the new ones.I strongly recommend young engineers to buy a copy.
Es präsentiert Leistungshalbleiter auf umfassender Weise Das Buch prasentiert auch diverse Störungen und Schwingungen, die durch Schaltvorgänge bei Leistungskomponenten verursacht werden. 68). Ein gründliches, ausgewogenes Buch, das sowohl Energietechnik-Studierenden als auch Leistungselektronik-Entwicklungsingenieuren eine Fülle an wertvollen Informationen und Einsichten bietet.“ (in: Bulletin SEV/VSE, 7/October/2011, Issue 10, S. Die Lektüre schafft es, fundierte Theorie praxisnah und verständlich zu vermitteln. Aus den Rezensionen:“ Das Buch ist eine erweiterte, aktualisierte englische Version des deutschen Buchs der Autoren
Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Semiconductor power devices are the heart of power electronics. Semiconductor properties, pn-junctions and the physical phenomena for unders